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  this is information on a product in full production. april 2013 docid023406 rev 3 1/9 9 STTH8T06 600 v tandem extra fast diode datasheet ? production data features ? high voltage rectifier ? tandem diodes in series ? very low switching losses ? insulated device with internal ceramic ? equal thermal conditions for both 300 v diodes ? static and dynamic equ ilibrium of internal diodes are warranted by design ? insulated package: ? capacitance: 7 pf ? insulated voltage: 2500 v rms description this device is part of st's second generation of 600 v tandem diodes. it has ultralow switching- losses with a minimized q rr (6 nc) that makes it perfect for use in circuits working in hard- switching mode. in particular the v f /q rr trade-off positions this device between standard ultrafast diodes and silicon-carbide schottky rectifiers in terms of price/performance ratio. the device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints. featuring st's turbo 2 600 v technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. table 1. device summary symbol value i f(av) 8 a v rrm 600 v t rr (typ) 15 ns i rm (typ) 2.3 a v f (typ) 2.05 v i frm) 40 a t j (max) 175 c to-220ac ins stth di 8t06 a a k k www.st.com
characteristics STTH8T06 2/9 docid023406 rev 3 1 characteristics to evaluate the conduction loss es use the following equation: p = 1.75 x i f(av) + 0.10 i f 2 (rms) table 2. absolute ratings (limiting values at t j = 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage t j from 25 to 150 c 600 v t j = -40 c 550 i f(rms) forward rms current 14 a i f(av) average forward current, ? = 0.5 t c = 100 c 8 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 80 a i frm repetitive peak forward current t c = 100 c, ? = 0.1 40 a t stg storage temperature range -65 to +175 c t j operating junction temperature -40 to +175 c table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case 2.8 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 10 a t j = 125 c 30 300 v f (2) forward voltage drop t j = 25 c i f = 8 a 2.95 v t j = 150 c 2.05 2.55 1. pulse test: t p = 5 ms, ? < 2% 2. pulse test: t p = 380 s, ? < 2%
docid023406 rev 3 3/9 STTH8T06 characteristics table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v, di f /dt = -50 a/s 23 30 ns i f = 8 a, v r = 400 v, di f /dt = -200 a/s 15 20 t j = 125 c i f = 8 a, v r = 400 v, di f /dt = -200 a/s 22 i rm reverse recovery current t j = 25 c i f = 8 a, v r = 400 v, di f /dt = -200 a/s 0.8 1.1 a t j = 125 c 2.3 3 s softness factor t j = 25 c 1.6 - t j = 125 c 0.8 q rr reverse recovery charge t j = 25 c 6 nc t j = 125 c 28 figure 1. average forward power dissipation versus average forward current figure 2. forward voltage drop versus forward current (typical values) 0 4 8 12 16 20 24 28 32 012345678910 p f(av) (w) 11 t =tp/t tp i f(av) (a) =0.05 =0.1 =0.2 =0.5 =1 i fm (a) 0.1 1.0 10.0 100.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v fm (v) t j =150 c t j =125 c t j =25 c figure 3. relative variation of thermal impedance, junction to case, versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values) z t h (j-c) /r t h (j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 t p (s) single pulse i rm (a) 0 1 2 3 4 5 6 7 8 0 100 200 300 400 500 600 700 800 900 1000 v r =400 v t j =125 c i f =0.5 x i f(av) i f =i f(av) i f =2 x i f(av) di f /dt(a/s)
characteristics STTH8T06 4/9 docid023406 rev 3 figure 5. reverse recovery time versus di f /dt (typical values) figure 6. reverse recovery charges versus di f /dt (typical values) t rr (ns) 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 900 1000 v r =400 v t j =125 c i f =0.5 x i f(av) i f =i f(av) i f =2 x i f(av) di f /dt(a/s) q rr (nc) di f /dt(a/s) 0 10 20 30 40 50 60 0 100 200 300 400 500 600 700 800 900 1000 v r =400 v t j =125 c i f =0.5 x i f(av) i f =i f(av) i f =2 x i f(av) figure 7. reverse recovery softness factor versus di f /dt (typical values) figure 8. relative variations of dynamic parameters versus junction temperature 0.0 0.5 1.0 1.5 2.0 0 100 200 300 400 500 600 700 800 900 1000 s fact or i f =i f(av) v r =400 v t j =125 c di f /dt(a/s) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 25 50 75 100 125 t j (c) i f =i f(av) v r =400 v reference: t j =125 c s factor i rm q rr figure 9. junction capacitance versus reverse voltage applied (typical values) figure 10. relative variation of non-repetitive peak surge forward current versus pulse duration c(pf) 10 100 1 10 100 1000 f=1 mhz v osc =30 mv rms t j =25 c v r (v) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 i (t )/i (10ms) fsm p fsm , t (ms) p sinusoidal waveform
docid023406 rev 3 5/9 STTH8T06 characteristics figure 11. relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 175 t (c) j i (t )/i (25 c) fsm j fsm
package information STTH8T06 6/9 docid023406 rev 3 2 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com . ecopack ? is an st trademark. figure 12. t0-220ac ins dimension definitions c b2 c2 f ? i l a a1 a2 b e b1 i4 l2 c1 m
docid023406 rev 3 7/9 STTH8T06 package information table 6. t0-220ac ins dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 m 2.60 0.102
ordering information STTH8T06 8/9 docid023406 rev 3 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STTH8T06di STTH8T06di to-220ac ins 2.30 g 50 tube table 8. document revision history date revision changes 16-oct-2012 1 initial release 07-nov-2012 2 expanded description section 11-apr-2013 3 added figure 10 and figure 11 .
docid023406 rev 3 9/9 STTH8T06 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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